The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 1996
Filed:
Sep. 11, 1995
Keiichiro Kashihara, Hyogo, JP;
Hiromi Itoh, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An object of the invention is to provide a capacitor having good anti-leak characteristics and good breakdown voltage characteristics. A transfer gate transistor having source/drain regions is formed on a surface of a silicon substrate. There is provided a lower electrode layer connected to the source/drain region through a plug layer which fills a contact hole formed at an interlayer insulating film. On the lower electrode layer, there is formed a capacitor insulating layer which includes a ferroelectric layer and exposes at least a sidewall surface of the lower electrode layer. The exposed sidewall surface of the lower electrode layer is covered with a sidewall insulating layer which is formed on a top surface of the interlayer insulating film and has a sidewall spacer configuration. The lower electrode layer is covered with an upper electrode layer with the sidewall insulating layer and capacitor insulating layer therebetween.