The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 1996
Filed:
Jan. 05, 1995
Mitsubishi Gas Chemical Company, Inc., Tokyo, JP;
Abstract
A bismuth-substituted rare earth iron garnet single crystal film is represented by a general equation Tb.sub.x Lu.sub.y Bi.sub.3-x-y Fe.sub.5-z Al.sub.z O.sub.12 (where 0.09.ltoreq.y/x.ltoreq.0.23, 1.40.ltoreq.x+y.ltoreq.1.70, 0.20.ltoreq.z.ltoreq.0.38) grown on a non-magnetic garnet substrate (CaGd).sub.3 (MgZrGa).sub.5 O.sub.12 having a lattice constant of 12.490 .ANG.-12.500 .ANG. by a liquid phase epitaxial method. The bithmus-substituted rare earth iron garnet single crystal film satisfies three conditions that (1) the Faraday effect is large, i.e., the film thickness required for the Faraday rotator at a wavelength of 1.55 .mu.m is 450 .mu.m or less, (2) the saturated magnetic field is 800 (Oe) or less, and (3) the temperature coefficient .alpha. is 0.07 deg/.degree.C. or less.