The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 1996
Filed:
Jan. 18, 1994
Friedrich Bobel, Uttenreuth, DE;
Norbert Bauer, Erlangen, DE;
Abstract
The invention describes a procedure and an arrangement for measurement of temperature and thickness of layer during a deposition or coating process. As coating or depositing processes known technologies of semi-conductor manufacturing arrangements, plasma devices, ion devices, and other dry-etching arrangements may be used. The invention can also be applied to the manufacture of optical coatings. As a consequence of interference of the thermal radiation of the substrate at the growing layer, the emissivity .epsilon. changes continuously during coating or depositing, therefore, a pyrometric measurement of temperature may not be applied. This basic problem is solved by the invention, which uses a reflectometer, which determines the reflectivity R of the wafer. According to the law of conservation of energy .epsilon.=1-R so that with said reflectometer the actual emissivity of the whole (multi-layer) system may be determined. The measurement of temperature then is effected by means of a determination equation. Concurrently the thickness is determined by a comparison of the reflectometer-curve and a theoretical dependency of thickness of layer.