The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 1996

Filed:

Dec. 23, 1992
Applicant:
Inventors:

Jin Y Chung, Seoul, KR;

Deog Y Kwak, Seoul, KR;

Chang M Khang, Chungcheongbuk-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257365 ; 257364 ; 257368 ; 257379 ; 257392 ; 257401 ; 327379 ;
Abstract

A variable operation speed MOS transistor having a source, a drain and a gate with a plurality of contacts formed thereon. One end of the gate of the variable operation speed MOS transistor is connected to drains/sources of first MOS transistors, while the plurality of the contacts formed on the gate of the variable operation speed MOS transistor are connected to the drains/sources of second MOS transistors, which are of an opposite type to that of the first MOS transistors, and the source or drains of which are connected to Vcc. Input signals are supplied to the respective gates of the first and second MOS transistors in such a manner as to adjust the turn-on and turn-off speeds of the variable operation speed MOS transistor.


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