The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 1996
Filed:
Dec. 23, 1994
Mikio Mukai, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of manufacturing a lateral insulated gate field effect transistor comprises the steps of forming a projecting portion on a first major surface of a semiconductor substrate, forming a pair of gate portions each of which is formed in each side of the projecting portion, forming an insulating layer on the resulting surface of the semiconductor substrate by burying the projecting portion and the pair of gate portions, and removing the semiconductor substrate from a second major surface of the semiconductor substrate to a position of the insulating layer in which the projecting portion is buried to expose the bottom surface of the projecting portion.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile