The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 1996

Filed:

Jan. 30, 1995
Applicant:
Inventors:

Sang H Woo, Kyoungki-do, KR;

Ha E Jeon, Seoul, KR;

Young J Park, Kyoungki-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257306 ; 257308 ; 257309 ; 257754 ;
Abstract

A storage electrode of a DRAM cell in a highly-integrated semiconductor device has, in order to secure the surface area thereof greater than that of a conventional tunnel-type storage electrode, an upper plate of storage electrode formed over a lower plate of storage electrode separated therefrom by a predetermined distance, while interposing bars of irregularly shapes formed of a conductive layer to electrically connect the upper and lower plates.


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