The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 1996
Filed:
Feb. 16, 1994
Doran D Smith, Brick, NJ (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
A method and apparatus for finding internal charge flow distribution in a dual-channel field effect semiconductor device having at least two source terminals, two drain terminals, a control gate and two isolation gates. Electrical energy of different frequencies is applied to different ones of the source terminals for causing currents to flow in each of the channels between the source and drain terminals. Using the isolation gates to achieve channel pinch off, one of the drain terminals and one of the source terminals are selectively coupled to only one of the channels. A control signal is applied to the control gate for controlling the amount of the electrical energy conducting in each of the channels. Data is collected by measuring currents at the different frequencies at each of the drain terminals while a magnetic field perpendicular to the plane of the channels is varied. The data is subjected to a Schubnikov-de Haas analysis to find the amounts of source currents flowing in each of the channels and at each of the drain terminals.