The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 1996
Filed:
Apr. 20, 1995
Shin Koide, Tokyo, JP;
Susumu Ohi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method for a thin-film transistor employed as a liquid crystal display includes the steps of selectively forming a gate electrode on a substrate, covering the gate electrode and the substrate with a gate insulating film, forming a semiconductor channel layer on the gate insulating film, forming on the channel layer a semiconductor contact layer of a first conductivity type having first, second and third portions, forming source and drain electrodes respectively on the first and second portions of the contact layer, removing the third portion of the contact layer to expose a part of the channel layer, and forming a semiconductor region of a second conductivity type at the part of the channel layer.