The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 1996
Filed:
Apr. 12, 1994
Rick C Jerome, Monument, CO (US);
Ian R Post, Colorado Springs, CO (US);
Other;
Abstract
The present invention teaches a method of making an isolation trench. First, a silicon on insulator ('SOI') structure is provided having a conductive layer superjacent the insulator of the SOI. Second, a trench is formed down to the insulator of the SOI, thereby creating a first and second conductive region. Third, a first silicon dioxide layer is formed conformally with the sidewalls of the first and second conductive region. Fourth, a second silicon dioxide layer is formed conformally and superjacent the first silicon dioxide layer. Fifth, the remaining areas unfilled in the trench are filled with an undoped polysilicon filling. Sixth, the polysilicon layer is planarized. Seventh, an oxide cap is formed on top of the polysilicon refill. Eight, an isolation mask is formed, and the active area openings within the structure are etched down to the single crystal silicon.