The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 1996

Filed:

Mar. 03, 1995
Applicant:
Inventor:

Michael F Chisholm, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566361 ; 1566521 ; 1566551 ; 1566531 ; 1566571 ; 437228 ;
Abstract

A structure and method for chemical-mechanical polishing of a semiconductor body (100) having topographical steps (102) on a surface thereof. A first film (104) having a first CMP removal rate is deposited over the surface of a semiconductor body (100). A second film (106) having a second CMP removal rate is deposited over the first film (104). The second removal rate is not equal to the first removal rate. CMP is performed on the semiconductor body (100) such that the first film (104) is initially exposed only over the topographical steps (102). CMP continues until the semiconductor body (100) has a planarized surface. Because one of the films (104, 106) has a high removal rate and the other (106,104) has a low removal rate, a CMP process is provided requiring less time and having better process uniformity and process latitude.


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