The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 1996
Filed:
Apr. 18, 1995
Katsunori Abe, Chita-gun, JP;
Yuji Kimura, Nagoya, JP;
Kinya Atsumi, Okazaki, JP;
Yoshiki Ueno, Okazaki, JP;
Noriyuki Matsushita, Nagoya, JP;
Nippondenso Co., Ltd., Kariya, JP;
Abstract
The semiconductor laser device provides a large output laser beam approximating a circular shape. Formed on an n-GaAs substrate is an n-GaAs layer, further thereon in mesa type with an n-Al.sub.0.4 Ga.sub.0.6 As clad layer, an n-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, an active layer formed of Al.sub.0.2 Ga.sub.0.8 As/GaAs multi-quantum well structure, a p-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, a p-Al.sub.0.4 Ga.sub.0.6 As clad layer, and a p-GaAs layer. A thickness of the active layer is made equal to 127.5 nm, and a sum of thicknesses of the active layer and the optical guide layers and is made equal to or more than 1.5 .mu.m. On the n-GaAs layer and the upper surface of mesa shaped portion are formed an insulating film and a p-type electrode, the stripe width of which is equal to 400 .mu.m.