The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 1996
Filed:
Sep. 27, 1994
Applicant:
Inventors:
Assignee:
Sanyo Electric Co., Ltd., Moriguchi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S / ; H01L / ;
U.S. Cl.
CPC ...
372 45 ; 257 18 ; 257 96 ;
Abstract
The present invention is directed to a semiconductor laser device in which an active layer is constituted by a quantum well layer having a structure in which well layers and barrier layers which are formed on a GaAs substrate are alternately layered, cladding layers are provided so as to interpose the active layer, the value of a strain on each of the well layers is -0.8% to -1.5%, the thickness of a well layer is from 80 .ANG. to 180 .ANG., the value of strain on each of the barrier layers is +0.5% to +1.0%, the thickness of the barrier layer is 20 .ANG. to 60 .ANG., and the respective numbers of layered well layers and barrier layers are 2 to 4.