The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 1996
Filed:
Aug. 16, 1993
Tsuguyasu Hatsuda, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
In the present invention, there are disposed (i) a P-channel MOSFET for detecting variations of the voltage level of a data line to supply an electric current, and (ii) a current mirror circuit to which an electric current from the P-channel MOSFET is entered as a reference current and of which output current terminal is connected to the data line. When the data line is lowered in voltage level so that an electric current flows from the P-channel MOSFET to the current mirror circuit, an output current of the current mirror circuit flows to the drain of an N-channel MOSFET, so that the data line is electrically discharged. Thus, there is achieved a sensing circuit unit which is suitably used for a dynamic circuit and which can detect, at a high speed, variations of the voltage level of the data line as precharged.