The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 1996
Filed:
Aug. 30, 1994
Applicant:
Inventors:
Chenming Hu, Alamo, CA (US);
Ping K Ko, Richmond, CA (US);
Fariborz Assaderaghi, Berkeley, CA (US);
Stephen Parke, Poughkeepsie, NY (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257369 ; 257351 ; 257402 ; 327328 ; 327434 ;
Abstract
A dynamic threshold voltage IGFET such as a MOSFET is operable at voltages of 0.6 volt or less. The threshold voltage of the transistor is reduced to zero volt or less by interconnecting the gate contact and the device body in which the voltage controlled channel is located. Several efficient connections using through hole plating or polycrystalline silicon gate extension are disclosed. A higher power supply voltage can be used by interconnecting the gate and device body through a smaller MOSFET.