The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 1996
Filed:
Mar. 24, 1994
Avery N Goldstein, Midland, MI (US);
Starfire Electgronic Development & Marketing Ltd., Bloomfield Hills, MI (US);
Abstract
Patterns or circuits of semiconductors or metals are produced with dimensions at least as small as 7 nm using nanocrystalline precursors. The substrate is masked with an electron beam sensitive layer and a pattern is traced using a focused electron beam. Exposure to a source of nanocrystalline material and dissolution of the mask material produces patterned features of nanocrystals. The sample may then be heated to form a bulk thin film or left unheated, preserving the electronic properties of the isolated particles. The process is repeatable with different materials to build laminar structures of metals, semiconductors and insulators.