The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 1996
Filed:
Jul. 25, 1995
Applicant:
Inventor:
Byung J Cho, Kyungki-Do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 44 ; 437 40 ; 437 41 ; 437160 ; 437164 ; 437158 ;
Abstract
The semiconductor device of the present invention is formed by forming a gate electrode in the form of T-shape, forming auxiliary gates which are capacitively coupling with the T-shape gate electrode at undercut portions below both sides of T-shape gate, forming a lightly doped region in the silicon substrate below the auxiliary gate by utilizing a doped oxide film, and forming a heavily doped region connected to a lightly doped region. Accordingly, the present invention can form a short channel length required for a highly integrated circuit device, and greatly improve the operational speed of the device by reducing channel resistance of a lightly doped region of LDD structure.