The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1996
Filed:
Jan. 20, 1995
Kiyofumi Ochii, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor nonvolatile RAM having a dynamic RAM cell and an E.sup.2 PROM cell. The dynamic RAM cell includes a first transistor having a current path having one end connected to a bit line and a gate connected to a word line. A storage region is connected to another end of the current path. The E.sup.2 PROM cell includes a second transistor including a source region, a drain region, a channel region having first and second parts between the source and drain regions, a floating gate above the first part of the channel region and the source region, and a control gate. The drain of the second transistor is connected to the another end of the current path of the first transistor. Another end of the storage region is above the second part of the channel region and the floating gate. The channel region of the second transistor is rendered conductive in accordance with data stored in the storage region of the dynamic RAM cell.