The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 1996

Filed:

Jun. 02, 1995
Applicant:
Inventor:

James R Kuo, Cupertino, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H03K / ;
U.S. Cl.
CPC ...
327108 ; 327110 ; 327378 ; 327379 ; 327389 ; 327391 ; 327427 ; 326 21 ; 326 30 ;
Abstract

A driver for providing binary signals from a data system to a transmission line is disclosed. A first n-channel transistor has its drain coupled to the transmission line and its source coupled to ground. The channel of the first n-channel transistor has a width that is greater than its length. A first inverter stage conducts current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and conducts current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state. A discharge circuit provides a discharge path from the gate of the first n-channel transistor to ground during a discharge time period and then removes the discharge path at the end of the discharge time period. A temperature compensation circuit may be coupled to the first inverter stage to adjust the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature.


Find Patent Forward Citations

Loading…