The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1996
Filed:
Jul. 14, 1994
Applicant:
Inventor:
Steven Lee, Colorado Springs, CO (US);
Assignees:
AT&T Global Information Solutions Company, Dayton, OH (US);
Hyundai Electronics America, San Jose, CA (US);
Symbios Logic Inc., Fort Collins, CO (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257370 ; 257377 ; 257466 ; 257571 ; 257580 ; 257586 ; 257588 ; 257592 ; 257656 ; 257754 ; 437 33 ; 437 34 ; 437 63 ; 437105 ; 437174 ; 437186 ; 437203 ;
Abstract
A monolithic semiconductor device includes a field effect transistor and a bipolar junction transistor with an elevated emitter structure. An elevation structure raises the BJT emitter above the plane of the base. The elevation structure increases travel distance between a heavily doped base contact region and the emitter and protects against encroachment without increasing the total surface area allocated to the BJT device. A spacer oxide separates the polysilicon base contact and the elevation structure.