The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1996
Filed:
May. 24, 1995
Jun-ichi Nishizawa, Sendai, JP;
Handotai Kenkyu Shinkokai, Sendai, JP;
Abstract
g A field effect transistor has the property that the product of its active total series resistance and its true transconductance is less than one throughout the entire range of drain voltage in the operative state of this transistor, the active total series resistance being the sum of the active resistance from source to channel, the active resistance of this channel and the active resistance from channel to drain. In order to prevent an excessive increase in the active resistance of the channel, the channel is made to have an impurity concentration as low as less than 10.sup.15 atoms/cm.sup.3, preferably less than 10.sup.14 atoms/cm.sup.3, so that the depletion layers extending from the gates grow extensively to become contiguous in such fashion in response to a small increase in the reverse gate voltage applied, that no narrow lengthy path is formed between the depletion layers. As a result, the field effect transistor of this invention has an unsaturated drain current versus drain voltage characteristic.