The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 1996

Filed:

Nov. 01, 1993
Applicant:
Inventors:

Steven J Adler, Tempe, AZ (US);

George W Hawkins, Mesa, AZ (US);

Israel A Lesk, Phoenix, AZ (US);

Peter L Pegler, Mesa, AZ (US);

Hassan Pirastehfar, Mesa, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 11 ; 437 12 ; 437 70 ;
Abstract

A method for gettering metallic impurities from a semiconductor substrate (25). A gettering structure is fabricated in inactive areas of a semiconductor chip (31). The gettering structure is manufactured by forming an oxide (30) having a bird's head structure contacting a heavily doped region (28). The combination creates precipitation nuclei to which the metallic impurities migrate. The metallic impurities are sequestered by the precipitation nuclei or trap sites and rendered incapable of degrading the electrical characteristics of a semiconductor device.


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