The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1996
Filed:
Sep. 27, 1995
Atsushi Ogura, Tokyo, JP;
NEC Corporation, , JP;
Abstract
In an SOI substrate having a base substrate, an insulating film and a semiconductor active layer, a potential difference is given between the base substrate and an etching solution or among the base substrate, the semiconductor active layer and the etching solution to form a uniform depletion layer on the active layer side from the interface between the insulating film and the active layer. The semiconductor active layer is uniformly thinned down by etching using a solution or by the combination of chemical or electro-chemical surface and etching with the resultant reaction product. In this case, the individual electrodes are provided with seal members to prevent the base substrate electrode and the active layer electrode from contacting the etching solution or the reaction solution due to the etching using the etching solution or the chemical reaction using the reaction solution. According to this invention, therefore, the active layer in, for example, a bonded SOI substrate can be thinned down uniformly at a low cost.