The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1996
Filed:
Dec. 05, 1994
Applicant:
Inventors:
Francis G Celii, Dallas, TX (US);
Yung-Chung Kao, Dallas, TX (US);
Andrew J Purdes, Garland, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 85 ; 437-7 ; 437105 ; 437126 ; 437133 ; 117 84 ; 117 86 ;
Abstract
Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of integrated mass spectormeter (204) signals. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
Quick Actions:
Celii, Francis. (1996). Growth method by repeatedly measuring flux in mbe chamber (U.S. Patent No. 5556462). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5556462
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