The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1996
Filed:
Dec. 23, 1994
Shoji Honda, Tottori, JP;
Masayuki Shono, Moriguchi, JP;
Ryoji Hiroyama, Hirakata, JP;
Yasuyuki Bessho, Uji, JP;
Hiroyuki Kase, Takatsuki, JP;
Toyozo Nishida, Hirakata, JP;
Takahiro Uetani, Hirakata, JP;
Junko Suzuki, Nara, JP;
Sanyo Electric Co., Ltd., Osaka-fu, JP;
Abstract
On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.