The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1996
Filed:
Oct. 14, 1993
Peter Brauchle, Nehren, DE;
Manfred Uebele, Reutlingen, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A monolithically integrated MOS output-stage component, particularly a DMOS output stage, includes an output-stage element having a GATE connection, a SOURCE connection, and a DRAIN connection, and also includes an excess-temperature protection device. An integrated GATE-protection resistor is provided. The excess-temperature protection device is also integrated in the output-stage component and includes a series connection of a Zener-diode with a temperature-dependent resistor having a positive temperature coefficient. The resistor is coupled with the SOURCE connection while the Zener-diode is coupled with an outer GATE connection. The series connection is provided with a supply voltage. Furthermore, the excess-temperature protection device contains a semiconductor arrangement controlled by a control voltage at the tap node of the series connection. The semiconductor arrangement reduces the GATE voltage upon the occurrence of excess temperatures. In this way, an evaluation signal having a high total slope with respect to temperature is obtained with only slight requirements for the temperature-dependent resistor. Tank leakage currents are compensated for. The output-stage component is completely integratable in a simple manner and, thus, can be manufactured at favorable cost.