The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 1996

Filed:

Aug. 02, 1995
Applicant:
Inventors:

Jon T Fitch, Austin, TX (US);

Suresh Venkatesan, Austin, TX (US);

Keith E Witek, Austin, TX (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257334 ; 257329 ; 257347 ; 257350 ;
Abstract

An integrated circuit (10) has a vertical device, such as a transistor (71), formed by epitaxial growth from a substrate (12) and a horizontal device, such as a transistor (73, 75) grown epitaxially from the vertical device. In accordance with one embodiment of the invention, all six transistors of an SRAM cell can be formed in single crystal material for improved device characteristics and increased cell density. Utilization of various combinations of vertical and horizontal devices permits a large degree of vertical integration within semiconductor devices.

Published as:

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Fitch, Jon. (1996). Integrated circuit having both vertical and horizontal devices and (U.S. Patent No. 5554870). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5554870

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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