The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1996
Filed:
Mar. 10, 1995
Peter H Rose, N. Conway, NH (US);
Krytek Corporation, Danvers, MA (US);
Abstract
A scheme for producing ions of a selected ion species and a selected ion energy comprising: an ion plasma source for generating an ion source plasma from a selected source gas and having an ion exit aperture; an extraction electrode for extracting and for accelerating ions from the exit aperture of the plasma source, the extraction electrode being positioned in the vicinity of the ion exit aperture of the ion plasma source, the ion source being biased at a potential relative to the extraction electrode to achieve a selected ion beam energy; a magnetic structure having pole faces that define a magnetic deflection gap therebetween and having an ion exit region where ions exit the magnetic deflection gap, the ion plasma source and the extraction electrode being positioned in the magnetic deflection gap so that when the magnetic structure is energized ions extracted from the plasma source corresponding to the selected species are deflected about an angular beam path trajectory of at least ninety degrees before extracted ions reach the ion exit region and exit the magnetic deflection gap. An improved scheme for implanting ions produced by the above-mentioned scheme is also disclosed.