The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1996
Filed:
Jul. 05, 1994
Hitachi, Ltd., Tokyo, JP;
Abstract
A molecular or atomic beam for cleaning or etching semiconductor substrates, or for forming a thin film on a semiconductor substrate is formed by generating a chemical reaction between at least two gases introduced into a reaction chamber. The products of the chemical reaction, and optionally additional atoms or molecules introduced into the reaction chamber, pass through an aperture to form a beam that is projected onto a sample supported in a sample chamber. The translation energy generated by the chemical reaction accelerates the atoms, molecules and/or particles to a high speed to enable cleaning, etching or depositing processes to be formed with the beam without damaging the surface of the substrate being treated.