The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 1996
Filed:
Oct. 28, 1994
Takenori Morikawa, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device with bipolar transistors formed in respective island regions in which collector regions of the bipolar transistors do not need to be pulled up to the top of the corresponding island regions and do not need to be contacted with a collector electrode on the top of the corresponding island regions. First and second semiconductor island regions are formed to be buried in a second insulator formed on a first insulator. First and second bipolar transistors are provided in the first and second island regions, respectively. An interconnection conductor for electrically interconnecting collector regions of the first and second transistors is formed in the second insulator and in contact with the collector regions of the first and second transistors. A common collector electrode formed on a third insulator covering the first and second island regions is electrically connected with the collector regions of the first and second transistors through the interconnection conductor, respectively.