The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 1996
Filed:
Mar. 09, 1994
Susumu Murakami, Katsuta, JP;
Takuya Fukuda, Hitachi, JP;
Yoshiteru Shimizu, Katsuta, JP;
Yoshitaka Sugawara, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device has a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type contacted by respective first and second electrodes. A semi-insulating layer extends between the first and second electrodes and there is a first insulating layer between the semi-insulating layer and the first semiconductor region. The sheet resistivity of the semi-insulating layer varies, and this improves the high breakdown voltage of the p-n junction of the semiconductor device between the first and second semiconductor layers, by acting as a shield for charges included on a passivation insulation layer covering the semi-insulating layer and the first and second electrodes. Third semiconductor regions, with corresponding third electrodes, extend around, and are spaced from, the second semiconductor region. The third electrodes extend over the parts of the first semiconductor region adjacent the third semiconductor regions, and this also serve to improve the breakdown voltage. The second electrode may also extend over the part of the first semiconductor region adjacent the second semiconductor region to cover the p-n junction therebetween.