The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 1996
Filed:
Jun. 06, 1995
Applicant:
Inventors:
Kyung S Kim, Seoul, KR;
Jun H Lim, Seoul, KR;
Assignee:
LG Semicon Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 29 ; 437 44 ; 437203 ; 437968 ;
Abstract
A method of fabricating a metal oxide semiconductor transistor comprising:
Kim, Kyung. (1996). Method of making metal oxide semiconductor transistors (U.S. Patent No. 5552329). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5552329
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile