The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1996
Filed:
Dec. 22, 1994
Matsushita Electronics Corporation, Osaka, JP;
Abstract
A semiconductor device comprises: a signal of high voltage not less than the power voltage; a first transistor for transmitting the high voltage signal; a second transistor for electrically charging and discharging the gate potential of the first transistor; and a circuit for generating a pulse signal of which 'H' level is a voltage higher than the power voltage by the threshold voltage of the second transistor. The pulse signal generating circuit is connected to the gate electrode of the second transistor. This cancels the drop of a voltage corresponding to the threshold voltage generated at the time when the electric charge is transferred to the gate electrode of the first transistor. Accordingly, even though the power voltage is low, a high voltage signal can be transferred through the first transistor and the word line potential can be boosted to a voltage not less than the power voltage.