The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1996
Filed:
May. 24, 1995
Kazuhito Tsutsumi, Hyogo-ken, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A polycrystalline silicon film which is to be a channel is in a trench provided in a main surface of a silicon substrate. A gate insulating film is on the periphery of a polycrystalline silicon film. A gate electrode is on the periphery of the gate insulating film. A silicon oxide film is on the periphery of the gate electrode. A source/drain film is on the periphery of the silicon oxide film. A silicon oxide film is on the periphery of the source/drain film. A source/drain film is electrically connected to the polycrystalline silicon film. A source/drain film is electrically connected to the polycrystalline silicon film. Since the polycrystalline silicon film extends along the depth direction of trench, a channel length can be sufficient to prevent a short channel effect. Also, compared to the case in which an epitaxial layer is used as a channel, since the polycrystalline silicon film is used as a channel, the time required for manufacturing the device can be shortened.