The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1996
Filed:
Mar. 30, 1995
John C Wolfe, Houston, TX (US);
Wanda Zagozdzon-Wosik, Houston, TX (US);
The University of Houston System, Houston, TX (US);
Abstract
The present invention is, in part, a new process for dopant diffusion, both p-type (e.g., B) and n-type (e.g., P, As), into silicon wafers, using rapid thermal processing (RTP). It uses a surface layer of a new planar dopant as an active dopant source. Such a source is produced using either a rigid holder wafer with a spin-on dopant or CVD doped oxides deposited on its surface, or such a source is high pressure planar solid source having a surface that has been activated by dry etching or sputtering etching. Such a dopant source is placed in proximity to a processed silicon wafer in such a manner that its active surface is facing the surface of the silicon wafer during RTP. Both the silicon wafer and the dopant source are heated by lamps emitting light causing transport of dopant from the dopant source to the silicon surface. The dopant source may be produced using either silicon wafers, quartz or ceramic plates or planar solid diffusion sources which are commercially available in a form of solid discs containing compounds containing various dopant atoms (e.g., B, P, and As).