The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1996
Filed:
Jun. 15, 1995
Applicant:
Inventor:
Jengping Lin, Taoyuan Hsien, TW;
Assignee:
Top Team/Microelectronics Corp., Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 56 ; 437 24 ; 437193 ; 437200 ; 437956 ;
Abstract
A method for fabricating a silicide shunt for use in dual-gate CMOS devices makes use of a nitrogen-containing silicide layer overlying the juncture between the P-type polysilicon layer and the N-type polysilicon layer. The nitrogen-containing silicide layer is formed by implanting nitrogen-containing ions, such as .sup.28 N.sub.2.sup.+, into a partial or overall silicide shunt which was originally deposited over the P-type polysilicon layer and N-type polysilicon layer. Therefore, the nitrogen-containing silicide layer can serve as a diffusion barrier layer retarding the lateral dopant diffusion of these polysilicon layers via the silicide shunt.