The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 1996

Filed:

Apr. 15, 1994
Applicant:
Inventors:

Sungho Jin, Millington, NJ (US);

Mark T McCormack, Summit, NJ (US);

Ramamoorthy Ramesh, Tinton Falls, NJ (US);

Assignee:

Lucent Technologies Inc., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B / ; B05D / ; C23C / ;
U.S. Cl.
CPC ...
428692 ; 4286 / ; 4286 / ; 428702 ; 428800 ; 428928 ; 360113 ; 338 / ; 2041922 ; 20419221 ; 252 / ; 324252 ; 427127 ; 427128 ; 427129 ; 427130 ;
Abstract

A magnetoresistance ratio of 200% (absolute value) or more at room temperature in a field of 6T can be achieved in a layer of material of nominal composition XMnO.sub.y (X is La and at least one of Ca, Sr and Ba, y in the range 2-3.5), if, after formation of the layer, the layer is heat treated in an oxygen-rich (O.sub.2 partial pressure greater than that of air) atmosphere, typically in flowing O.sub.2. The temperature and duration of the heat treatment are in the range 300.degree.-850.degree.C. and 10 minutes-12 hours, and are selected to result in the desired ratio of 200% or more.


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