The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1996
Filed:
Dec. 05, 1995
Applicant:
Inventor:
Yong-hee Lee, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257269 ; 257285 ; 257345 ; 257402 ; 257403 ; 257404 ; 257607 ; 257657 ; 257919 ; 437 27 ; 437 29 ; 437 44 ; 437 45 ; 437933 ;
Abstract
AMOS transistor with enhanced electrical characteristics and a method for manufacturing the same. In the channel region, a first impurity region is provided for adjusting a threshold voltage, a second impurity region is provided which serves as a diffusion barrier, and a third impurity region is provided for preventing a punchthrough. These regions are formed sequentially at subsequently shallower depths in the substrate. The disclosed transistor minimizes short-channel effects and punchthrough without reducing the current driving capability of the device.