The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 1996

Filed:

Dec. 20, 1994
Applicant:
Inventors:

Shigeki Nakase, Hamamatsu, JP;

Shigeyuki Nakamura, Hamamatsu, JP;

Tsuyoshi Ohta, Hamamatsu, JP;

Assignee:

Hamamatsu Photonics K.K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
2502 / ; 2502 / ; 327514 ;
Abstract

A photodetecting circuit using an avalanche photodiode of the present invention has an avalanche photodiode, and a bias control means for applying a bias voltage to the avalanche photodiode to drive the avalanche photodiode at a high multiplication factor. The bias control means has a diode having the same temperature dependence of a breakdown voltage as that of the avalanche photodiode, and a control circuit for applying positive and negative potentials with respect to the ground potential between the anode and the cathode of the diode such that the diode is set in a breakdown state at a predetermined current. A positive or negative potential is applied from one of the anode and the cathode of the avalanche photodiode as a bias voltage, and a photocurrent is output from the other terminal of the avalanche photodiode.


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