The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1996
Filed:
Jun. 15, 1994
Applicant:
Inventors:
Nikhil R Taskar, Ossining, NY (US);
Dennis Gallagher, Stamford, CT (US);
Donald R Dorman, Carmel, NY (US);
Assignee:
Philips Electronics North America Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437108 ; 437106 ; 437107 ; 437942 ; 437965 ; 148D / ;
Abstract
The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is within the range of 200-250 nm.
Quick Actions:
Taskar, Nikhil. (1996). Photo-assisted nitrogen doping of ii-vi semiconductor compounds during (U.S. Patent No. 5547897). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5547897
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile