The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1996
Filed:
Dec. 06, 1994
Masana Harada, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In an SOI substrate including a single-crystal Si substrate (1b), an oxide film (20) and a single-crystal Si substrate (1a), there is formed an stepped wall surface (8) by selective removal of the single-crystal Si substrate (1a) to provide a thick oxide film (5) on the stepped wall surface (8). When a VDMOS (100) is formed in an active region of the single-crystal Si substrate (1b) above which the single-crystal Si substrate (1a) is absent and an MOS (101) having a thin oxide film (22) is formed in the single-crystal Si substrate (1a), the oxide film (5) is not damaged because it is thick. The thickness of the single-crystal Si substrate (1a) enables to be designed in accordance with the required thickness of the MOS (101).