The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1996
Filed:
Aug. 02, 1994
Applicant:
Inventors:
Takashi Amano, Nagoya, JP;
Makoto Okabayashi, Anjo, JP;
Assignee:
Technova, Inc., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C22C / ; C22C / ;
U.S. Cl.
CPC ...
252 / ; 252512 ; 252519 ; 136239 ; 428620 ; 428628 ; 428641 ;
Abstract
A thermoelectric semiconductor material comprises Si crystal and crystal of metal silicide selected from the group consisting of Fe, Co, Cr, Mn and Ni. It is preferable that the metal silicide is .beta.-FeSi.sub.2. Moreover, the thermoelectric semiconductor material further contains at least one element selected from the group consisting of Vb, VIb, IIIb, VIII, VIIa and VIa in the atomic periodic table as an additive. This element can be used as a dopant. Furthermore, since both the phase of the Si crystal and the phase of the crystal of the metal silicide are changed to be an n-type or a p-type, a thermoelectric characteristics are improved.