The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 1996
Filed:
May. 15, 1995
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A nonvolatile semiconductor memory device comprising an array of cell units, each cell unit including at least one memory transistor which has a floating gate and a control gate, the array being divided into a plurality of memory blocks each having a certain number of cell units. A selected memory block is erased by an erase voltage applied to a semiconductor substrate while unselected memory blocks are prevented from erasing by capacitive coupling of the erase voltage to floated word lines connected to control gates of memory transistors of the unselected memory blocks. In a program mode where a program voltage is applied to a selected word line of a selected memory block and a pass voltage is applied to unselected word lines of the selected memory block, channel regions and source and drain junctions of memory transistors of cell units in the selected memory block are charged to a program inhibition voltage. Channel regions and source and drain junctions of cell units associated with memory transistors programmed to the other binary data are discharged to be programmed while those of cell units associated with nonprogrammed memory transistors are maintained to the program inhibition voltage to prevent programming.