The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 1996

Filed:

Jul. 03, 1995
Applicant:
Inventors:

Satoshi Ueda, Osaka, JP;

Tetsuya Ueda, Osaka, JP;

Atsuhiro Yamano, Hyogo, JP;

Kousaku Yano, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257641 ; 257773 ; 257649 ; 257760 ;
Abstract

Metal wires are formed side by side over a semiconductor substrate, with an interlayer insulating film interposed between the metal interconnections and the semiconductor substrate. The metal interconnections are covered with a passivation film composed of a lower silicon oxide film and an upper silicon nitride film. The silicon oxide film is deposited so that the maximum thickness of the portions of the silicon oxide film on the side faces of the metal interconnections is less than half of the minimum space between the metal interconnections. The silicon nitride film is deposited so as to be interposed between the portions of the silicon oxide film on the side faces of the adjacent metal interconnections.


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