The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 1996

Filed:

Aug. 29, 1994
Applicant:
Inventors:

Dong H Yun, Kyungki-do, KR;

Kyu C Lee, Seoul, KR;

Hyung K Hong, Kyungki-do, KR;

Hyeon S Park, Seoul, KR;

Chul H Kwon, Seoul, KR;

Hyun W Shin, Kyungki-do, KR;

Assignee:

Goldstar Co., Ltd., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N / ; G01N / ;
U.S. Cl.
CPC ...
204424 ; 204426 ; 204431 ; 422 98 ;
Abstract

This invention relates to a low power consumption type thin film gas sensor and method for fabricating the same. The gas sensor includes a silicon substrate having a window in the central part of one side thereof, masking material formed on the one side thereof except the window, a supporting film formed of an etch stop layer and a glass film on the other side of the substrate, heaters and temperature sensors arranged in parallel on the supporting film facing the window, an interlayer insulation film formed on the supporting film to cover the heaters and the temperature sensors, sensing film electrodes formed on the interlayer insulation film, and a sensing film formed on the interlayer insulation film so as to cover the sensing film electrodes for sensing a particular gas.


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