The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 1996
Filed:
Nov. 23, 1993
Applicant:
Inventors:
Jean Barret, Eguilles, FR;
Daniel Quessada, Pourrieres, FR;
Assignee:
SGS-Thomson Microelectronics S.A., Pouilly, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257328 ; 257336 ; 257337 ; 257339 ; 257341 ; 257360 ;
Abstract
A MOS-type vertical power transistor formed in a semiconductor layer having a bottom surface which constitutes a first electrode and a top surface, the transistor further includes a large number of identical cells that are connected in parallel with a second electrode and a control electrode formed on the top surface. The power transistor includes at least one additional cell, formed in the semiconductor layer, having the same shape as the identical cells but a smaller lateral size than the identical cells, and a circuit to turn on the power transistor when the additional cell reaches an avalanche mode.