The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 1996
Filed:
Jun. 07, 1995
Gerard Byrne, Rottenburg, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A p-channel transistor has a drain electrode (12), a source electrode (13), a gate electrode (16) and a bulk electrode (14), the drain and source electrodes (12, 13) being constructed as p-regions in an n-well (10) and the well (10) itself being embedded in a surrounding p-region. The bulk electrode is simultaneously the well terminal and is connected to the source electrode (13), while the drain electrode (12) is connected to the positive pole (U.sup.+) of the operating voltage. This arrangement confers a reliable resistance to polarity reversal in conjunction with a minimum area requirement; even at relatively high temperatures, only negligible leakage currents flow; and, there is a need only for a single well (10) on which it is also possible to accommodate still other components.