The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 1996
Filed:
Oct. 08, 1993
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
On one major surface of an n.sup.- -type semiconductor substrate, a p-type base region is formed in a semiconductor substrate, and an n-type emitter region is formed in the p-type base region. A p-type source region is formed near the p-type base region. A cathode electrode has a so-called shorted emitter structure in which the cathode electrode is connected to the p-type source region, the p-type base region, and the n-type emitter region. The p-type source region preferably has a pattern adjacent the p-type base region. The p-type base region is preferably constituted by a plurality of diffusion layers which are electrically connected to each other. Therefore, turn-off characteristics of a device can be improved, and turn-on characteristics are improved without degrading the turn-off characteristics, thereby improving trade-off between the turn-on characteristics and the turn-off characteristics.