The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 1996

Filed:

Dec. 08, 1994
Applicant:
Inventors:

Steven S Lee, Colorado Springs, CO (US);

Kenneth P Fuchs, Colorado Springs, CO (US);

Gayle W Miller, Colorado Springs, CO (US);

Assignees:

AT&T Global Information Solutions Company, Dayton, OH (US);

Hyundai Electronics America, Milpitas, CA (US);

Symbios Logic Inc., Fort Collins, CO (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437200 ; 437201 ; 148D / ; 148D / ; 148D / ;
Abstract

A process for forming a titanium silicide local interconnect between electrodes separated by a dielectric insulator on an integrated circuit. A first layer of titanium is formed on the insulator, and a layer of silicon is formed on the titanium. The silicon layer is masked and etched to form a silicon strip connecting the electrodes, and an overlying second layer of titanium is formed over the silicon strip. The titanium and silicon are heated to form nonsilicidized titanium over a strip of titanium silicide, and the nonsilicidized titanium is removed.


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