The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 1996
Filed:
Oct. 31, 1994
Applicant:
Inventors:
Yoshihiko Hirai, Osaka, JP;
Kiyoshi Morimoto, Neyagawa, JP;
Yasuaki Terui, Neyagawa, JP;
Masaaki Niwa, Hirakata, JP;
Juro Yasui, Toyonaka, JP;
Kenji Okada, Suita, JP;
Masaharu Udagawa, Tokyo, JP;
Koichiro Yuki, Neyagawa, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437063 ; 437 62 ; 437 67 ; 437 68 ;
Abstract
A silicon substrate comprises at least two surfaces extending substantially along respective crystal faces of (111) crystal orientation of the silicon, the crystal faces of (111) crystal orientation crossing with each other, an electrically insulating layer formed by oxidizing the silicon substrate from the surfaces, and an electrically conductive portion insulated electrically by the electrically insulating layer from an outside of the silicon substrate.