The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 1996
Filed:
Apr. 21, 1995
Applicant:
Inventors:
Junichi Nishizawa, Sendai, Miyagi-ken, JP;
Yoshihiro Kokubun, Sendai, Miyagi-ken, JP;
Assignees:
Research Development Corporation of Japan, Tokyo, JP;
Other;
Primary Examiner:
Int. Cl.
CPC ...
C30B / ; C30B / ;
U.S. Cl.
CPC ...
117103 ; 117 92 ; 117904 ; 117954 ; 9272552 ; 927509 ; 927582 ;
Abstract
A method of manufacturing GaAs single crystals in which gas in the vicinity of the surface of a substrate crystal is irradiated with light so as to an epitaxial growth of GaAs single crystals may be enabled by the halogen transport method under such condition that the temperature of the substrate crystal is lowered less than 700.degree. C.
Quick Actions:
Nishizawa, Junichi. (1996). Method of manufacturing gaas single crystals (U.S. Patent No. 5542373). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5542373
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile